Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
Identifieur interne : 001E16 ( Chine/Analysis ); précédent : 001E15; suivant : 001E17Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
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Abstract
We have investigated the hybridization of the electron states, the light-hole states and the heavy-hole states in InAs/GaSb broken-gap quantum wells. This effect is profound when the InAs layer and the GaSb layer are sufficiently thick such that the electron level lies below the heavy-hole level and the light-hole level at zone center. To calculate the dispersions and the wave functions in these structures we have applied the scattering matrix algorithm to the eight-band kp model. We have found a hybridization gap as large as 20 meV resulting from the anticrossing of the electron and the light-hole dispersion curves. A multiple anticrossing of the electron states, the light-hole states and the heavy-hole states may occur when the heavy hole level lies in the hybridization gap produced by the electron states and the light-hole states. This unusual hybridization of the three subbands, which behaves differently for the spin-up and the spin-down states, has been investigated in details around the anticrossing point. While the electronlike and light holelike states mix strongly, the heavy holelike state may remain unperturbed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells</title><author><name sortKey="Zakharova, A" uniqKey="Zakharova A">A. Zakharova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Division, National Center for Theoretical Sciences, Hsinchu, Taiwan, Republic of China, and Institute of Physics and Technology, RAS, Nakhimovskii Avenue 34, Moscow 117218, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Physics Division, National Center for Theoretical Sciences, Hsinchu, Taiwan, Republic of China, and Institute of Physics and Technology, RAS, Nakhimovskii Avenue 34, Moscow 117218</wicri:regionArea><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China</s1></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan</wicri:regionArea><wicri:noRegion>Taiwan</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Lund University, Solvegutun 14A, S 233 62 Lund, Sweden</s1></inist:fA14><country xml:lang="fr">Suède</country><wicri:regionArea>Department of Physics, Lund University, Solvegutun 14A, S 233 62 Lund</wicri:regionArea><wicri:noRegion>S 233 62 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Yen, S T" uniqKey="Yen S">S. T. Yen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Division, National Center for Theoretical Sciences, Hsinchu, Taiwan, Republic of China, and Institute of Physics and Technology, RAS, Nakhimovskii Avenue 34, Moscow 117218, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Physics Division, National Center for Theoretical Sciences, Hsinchu, Taiwan, Republic of China, and Institute of Physics and Technology, RAS, Nakhimovskii Avenue 34, Moscow 117218</wicri:regionArea><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Chao, K A" uniqKey="Chao K">K. A. Chao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Division, National Center for Theoretical Sciences, Hsinchu, Taiwan, Republic of China, and Institute of Physics and Technology, RAS, Nakhimovskii Avenue 34, Moscow 117218, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Physics Division, National Center for Theoretical Sciences, Hsinchu, Taiwan, Republic of China, and Institute of Physics and Technology, RAS, Nakhimovskii Avenue 34, Moscow 117218</wicri:regionArea><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0019219</idno><date when="2001-12-15">2001-12-15</date><idno type="stanalyst">PASCAL 02-0019219 AIP</idno><idno type="RBID">Pascal:02-0019219</idno><idno type="wicri:Area/Main/Corpus">010231</idno><idno type="wicri:Area/Main/Repository">00FB34</idno><idno type="wicri:Area/Chine/Extraction">001E16</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Energy gap</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Semiconductor quantum wells</term><term>Wave functions</term><term>k.p calculations</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7340G</term><term>7340K</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Etat interface</term><term>Bande interdite</term><term>Fonction onde</term><term>Calcul k.p</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have investigated the hybridization of the electron states, the light-hole states and the heavy-hole states in InAs/GaSb broken-gap quantum wells. This effect is profound when the InAs layer and the GaSb layer are sufficiently thick such that the electron level lies below the heavy-hole level and the light-hole level at zone center. To calculate the dispersions and the wave functions in these structures we have applied the scattering matrix algorithm to the eight-band kp model. We have found a hybridization gap as large as 20 meV resulting from the anticrossing of the electron and the light-hole dispersion curves. A multiple anticrossing of the electron states, the light-hole states and the heavy-hole states may occur when the heavy hole level lies in the hybridization gap produced by the electron states and the light-hole states. This unusual hybridization of the three subbands, which behaves differently for the spin-up and the spin-down states, has been investigated in details around the anticrossing point. While the electronlike and light holelike states mix strongly, the heavy holelike state may remain unperturbed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>64</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>ZAKHAROVA (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>YEN (S. T.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHAO (K. A.)</s1></fA11><fA14 i1="01"><s1>Physics Division, National Center for Theoretical Sciences, Hsinchu, Taiwan, Republic of China, and Institute of Physics and Technology, RAS, Nakhimovskii Avenue 34, Moscow 117218, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China</s1></fA14><fA14 i1="03"><s1>Department of Physics, Lund University, Solvegutun 14A, S 233 62 Lund, Sweden</s1></fA14><fA20><s2>235332-235332-8</s2></fA20><fA21><s1>2001-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0019219</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have investigated the hybridization of the electron states, the light-hole states and the heavy-hole states in InAs/GaSb broken-gap quantum wells. This effect is profound when the InAs layer and the GaSb layer are sufficiently thick such that the electron level lies below the heavy-hole level and the light-hole level at zone center. To calculate the dispersions and the wave functions in these structures we have applied the scattering matrix algorithm to the eight-band kp model. We have found a hybridization gap as large as 20 meV resulting from the anticrossing of the electron and the light-hole dispersion curves. A multiple anticrossing of the electron states, the light-hole states and the heavy-hole states may occur when the heavy hole level lies in the hybridization gap produced by the electron states and the light-hole states. This unusual hybridization of the three subbands, which behaves differently for the spin-up and the spin-down states, has been investigated in details around the anticrossing point. 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